View FSAB20PH6006_1242801.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FSAB20PH60 Smart Power Module for Partial Switching Converter
September 2006
FSAB20PH60
Smart Power Module for Partial Switching Converter Features
* Very low thermal resistance due to using DBC * 600V-20A single-phase rectifier bridge diode including two IGBTs for partial switching converter * Integrated IC for gate driving and protection * Divided negative dc-link terminals for current sensing * Isolation rating of 2500Vrms/min.
General Description
FSAB20PH60 is an advanced smart power module of PSC(Partial Switching Converter) that Fairchild has newly developed and designed mainly targeting low-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection function.
Applications
* AC 187V ~ 276V single-phase partial-switching converter of air-conditioner
Top View
44mm
Bottom View
26.8mm
Figure 1.
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
Integrated Power Functions
* 600V-20A rectifiers for single-phase ac input with IGBT switches for operation of partial switching converter
Integrated Drive, Protection and System Control Functions
* For IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection * Fault signaling: Corresponding to a UV fault (Low-side supply) * Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input * Built-in thermistor: Over-temperature monitoring
Pin Configuration
(1) VCC (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH
(21) ND (22) NR (23) NS
(24) NC Case Temperature (TC) Detecting Point (25) R
(26) S DBC Substrate (27) PR
Figure 2.
2
FSAB20PH60 Rev. A
www.fairchildsemi.com
FSAB20PH60 Smart Power Module for Partial Switching Converter
Pin Descriptions
Pin Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Pin Name
VCC COM NC IN(R) IN(S) VFO CFOD CSC NC NC NC NC NC NC NC NC NC NC R(TH) V(TH) ND NR NS NC R S PR Common Bias Voltage for IC Common Supply Ground Dummy Pin Signal Input for R-phase IGBT Signal Input for S-phase IGBT Fault Output
Pin Description
Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-Current Detection Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Series Resistor for the Use of Thermistor (Temperature Detection) Thermistor Bias Voltage Negative DC-Link of Rectifier Diode Negative DC-Link of R-phase IGBT Negative DC-Link of S-phase IGBT Dummy Pin AC Input for R Phase AC Input for S Phase Positive DC-Link Output
Internal Equivalent Circuit and Input/Output Pins
(20) VTH (19) RTH (8) CSC (7) CFOD (6) VFO (5) IN(S) (4) IN(R) (2) COM (1) VCC
NTC Thermistor D1 D2
(27) PR (26) S (25) R
CSC CFOD VFO IN(S) IN(R) COM VCC OUT(R) OUT(S)
Q1 D3 Q2 D4
(21) ND (23) NS (22) NR
Note: The low-side is composed of two IGBTs including rectifying diodes for each IGBT and one control IC which has gate driving, current sensing and protection functions. The highside is composed of two rectifying diodes without gate driving IC.
Figure 3.
3
FSAB20PH60 Rev. A
www.fairchildsemi.com
FSAB20PH60 Smart Power Module for Partial Switching Converter
Absolute Maximum Ratings (TJ = 25C,
Converter Part Symbol
Vi Vi(Surge) VPN VPN(surge) VCES VRRM Ii Ii TJ
Note:
Unless Otherwise Specified)
Parameter
Input Supply Voltage Input Supply Voltage (Surge) Output Voltage Output Voltage (Surge) Collector-emitter Voltage Repetitive Peak Reverse Voltage Input Current (100% Load) Input Current (130% Load) Operating Junction Temperature
Conditions
Applied between R-S Applied between R-S Applied between P-N Applied between P-N IGBT Diode TC 90C, VO = 280V, fPWM = 60Hz TC 90C, VO = 280V, fPWM = 60Hz (Note 1)
Rating
276 500 400 500 600 600 11 14 -20 ~ 125
Units
V V V V V V ARMS ARMS C
1. The maximum junction temperature rating of the power chips integrated within the module is 150 C(@TC 100C). However, to insure safe operation, the average junction temperature should be limited to TJ(ave) 125C (@TC 100C)
Control Part Symbol
VCC VIN VFO IFO VSC
Parameter
Control Supply Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current
Conditions
Applied between VCC - COM Applied between IN(R), IN(S) - COM Applied between VFO - COM Sink Current at VFO Pin
Rating
20 -0.3~VCC+0.3 -0.3~VCC+0.3 5 -0.3~VCC+0.3
Units
V V V mA V
Current Sensing Input Voltage Applied between CSC - COM
Total System Symbol
TC TSTG VISO
Parameter
Module Case Operation Temperature Storage Temperature Isolation Voltage
Conditions
-20C < TJ < 125C, See Fig.2 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC
Rating
-20 ~ 100 -40 ~ 125 2500
Units
C C Vrms
4
FSAB20PH60 Rev. A
www.fairchildsemi.com
FSAB20PH60 Smart Power Module for Partial Switching Converter
Absolute Maximum Ratings
Thermal Resistance Symbol
Rth(j-c)Q Rth(j-c)D
Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2.
Parameter
Junction to Case Thermal Resistance
Conditions
Each IGBT under Operating Condition Each Diode under Operating Condition
Min.
-
Typ.
-
Max.
2.8 2.6
Units
C/W C/W
Electrical Characteristics (TJ = 25C, Unless Otherwise Specified)
Main Circuit Part Symbol
VCE(SAT) VFM tON tC(ON) tOFF tC(OFF) trr ICES IR
Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4.
Item
Collector-Emitter Saturation Voltage Diode Forward Voltage Switching Times
Conditions
VCC = VBS =15V VIN = 5V VIN = 0V IC = 6.5A, TJ = 25C IC = 20A, TJ = 25C
Min.
-
Typ.
2.1 1.1 0.48 0.85 0.56 0.10 1.35 -
Max.
2.6 1.5 250 250
Units
V V s s s s s A A
VPN = 300V, VCC = VBS = 15V IC = 6.5A VIN = 0V 5V, Inductive Load (Note 3)
Collector - Emitter Leakage Current Diode Leakage Current
VCE = VCES VR = VRRM
-
100% IC 120% IC
trr
V CE
IC
IC
V CE
V IN tON tC(ON)
V IN(ON) 10% IC 90% IC 10% V CE
V IN tOFF
V IN(OFF) 10% V CE
tC(OFF)
10% IC
Figure 4. Switching Time Definition
5
FSAB20PH60 Rev. A
www.fairchildsemi.com
FSAB20PH60 Smart Power Module for Partial Switching Converter
Electrical Characteristics (TJ = 25C, Unless Otherwise Specified)
Control Part Symbol
IQCCL VFOH VFOL VSC(ref) UVCCD UVCCR tFOD VIN(ON) VIN(OFF) RTH Short Circuit Trip Level Supply Circuit UnderVoltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermistor @ TC = 25C (Note Fig. 10) @ TC = 80C (Note Fig. 10)
Note:
Parameter
Quiescent VCC Supply Current Fault Output Voltage VCC = 15V IN(L) = 0V
Conditions
VCC(L) - COM
Min.
4.5 0.45 10.7 11.2 1.0 3.0 -
Typ.
0.5 11.9 12.4 1.8 50 5.76
Max.
23 0.8 0.55 13.0 13.2 0.8 -
Units
mA V V V V V ms V V k k
VSC = 0V, VFO Circuit: 4.7k to 5V Pull-up VSC = 1V, VFO Circuit: 4.7k to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level CFOD = 33nF (Note 5) Applied between IN(R), IN(S) - COM
4. Over current protection is functioning only for the low-side IGBT. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Recommended Operating Conditions
Symbol
Vi VPN VCC fPWM
Note:
Parameter
Input Supply Voltage Output Voltage Control Supply Voltage PWM Input Signal
Condition
Applied between R - S Applied between P - N Applied between VCC - COM TC 100C, TJ 125C, Per IGBT (Note 6)
Value Min.
187 13.5 -
Typ.
280 15 60
Max.
276 400 16.5 -
Units
Vrms V V Hz
6. Regarding the switching method of FSAB20PH60, it follows the control method of the typical partial-switching power factor correction circuit as shown in Figure 5.
6
FSAB20PH60 Rev. A
www.fairchildsemi.com
FSAB20PH60 Smart Power Module for Partial Switching Converter
D1 Lac
D2 L o a d
(a)
Vac
IS
Cdc
Input Signal
1.5 Q , D 2 3 1 ON 0.5 0 D 2 , D3 ON 2 4 6 8 10
Q1 , D 4 ON D 1 , D4 ON 12 14 16 18 20
Q1 D3
Q2 D4 Rsh
-0.5 0 20 10 IS (A) 0 -10 -20 0 20 10 IQ(A) 0
Input Current
(b)
L o a d
2
4
6
8
10
12
14 Q1 ON
16
18
20
IGBT Current
-10 -20 0 20
L o a d
Q2 ON 2 4 6 8 10 12 14 16 18 20
10 ID(A) 0 -10 -20 0
Diode Current
D 1 ,D 4 ON D2 , D 3 ON 2 4 6 8 10 12 Time(ms) 14 16 18 20
(c)
Note:
Depending on the polarity of input voltage Vac, Q1 or Q2 is turned on at the zero crossing point of input voltage, and turned off considering the output power and distortion of input current. Each IGBT turns on with zero current with the utility frequency, 50 or 60Hz.
Figure 5. PWM Example of FSAB20PH60
7
FSAB20PH60 Rev. A
www.fairchildsemi.com
FSAB20PH60 Smart Power Module for Partial Switching Converter
Mechanical Characteristics and Ratings
Parameter
Mounting Torque Heatsink Flatness Weight Mounting Screw: M3
Conditions
Recommended 0.62Nm Note Fig. 6
Limits Min.
0.51 0 -
Typ.
0.62 15.00
Max.
0.72 120 -
Units
N*m um g
(+)
(+) (+)
Figure 6. Flatness Measurement Position
8
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
Time Charts of SPMs Protective Function
Input Signal
Protection Circuit State
UV CCR
RESET
SET
RESET
Control Supply Voltage
a1 UV CCD a3
a6
a2
a4
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current.
Figure 7. Under-Voltage Protection
9
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
Lower arms control input Protection circuit state Internal IGBT Gate-Emitter Voltage
c2
c6 c7
SET
RESET
c3
SC
c4 c1
Output Current
c8
SC Reference Voltage
Sensing Voltage of the shunt resistance Fault Output Signal
c5
CR circuit tim e constant delay
(with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input "L" : IGBT OFF state. c7 : Input "H": IGBT ON state, but during the active period of fault output the IGBT doesn't turn ON. c8 : IGBT OFF state
Figure 8. Over Current Protection
10
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
5V-Line
4.7k
PSC Module
CPU
100 1nF 1nF
VFO
COM
Note:
1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application's printed circuit board. The SPM input signal section integrates 3.3k (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs.
Figure 9. Recommended CPU I/O Interface Circuit
R-T Graph 120 100 Resistance [k] 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [C]
Figure 10. R-T Curve of the Built-in Thermistor
11
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
Vac
LAC
+5V
PSC Module, FSAB20PH60
VTH
NTC Thermistor D1 D2
Temperature RTH 0.1F +5V 4.7k 100 Fault 1nF Gate S Gate R 1nF CFOD
RTH CSC CFOD VFO IN(S) IN(R) COM
PR S R
Microcontroller or DSP
CSC CFOD VFO IN(S) IN(R) COM OUT(R) OUT(S)
Q1 D3 Q2 D4
Inverter
ND NR NS RSH
Current
VCC
VCC
100F 1F CSC RF
Note:
1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7k resistance. Please refer to Figure 9. 3. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 6 for calculation method. 4. Input signal is High-Active type. There is a 3.3k resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off/turn-on threshold voltage. 5. To prevent errors of the protection function, the wiring around RSC, RF and CSC should be as short as possible. 6. In the over current protection circuit, please select the RFCSC time constant in the range 3~4 s. 7. Each capacitors should be mounted as close to the pins as possible. 8. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 9. Internal NTC thermistor can be used for monitoring the case temperature and protecting the device from the overheating operation. Please select an appropriate resistor RTH according to the application. For example, use RTH=4.7k that will make the voltage across RTH to be 2.5V at 85C of the case temperature. 10. This PSC module is not designed for the internal IGBT to be turned on when the current is flowing through the input reactor LAC. Otherwise, there will be large reverse recovery current that makes considerably large turn-on switching loss of IGBT, which may destroy the internal IGBTs. 11. Please use an appropriate shunt resistor RSH to protect the intenal IGBT from the overcurrent operation. For example, if the IGBT current has to be protected below 25A, then use 20m resistor of RSH. When selecting protecting current level, please consider the variation and tolerance of external components. Moreover, the shunt resistor path from NR and NS to ND and ground that is connected to COM of the internal drive IC, should be thick and short in order to minimize the stray inductance that may generate improper switching of the module.
Figure 11. Application Circuit
12
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
Detailed Package Outline Drawings
13
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
Detailed Package Outline Drawings (Continued)
14
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
Detailed Package Outline Drawings (Continued)
15
www.fairchildsemi.com
FSAB20PH60 Rev. A
FSAB20PH60 Smart Power Module for Partial Switching Converter
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Formative or In Design First Production
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
16
www.fairchildsemi.com
FSAB20PH60 Rev. A

▲Up To Search▲

Price & Availability of FSAB20PH6006

	To Download FSAB20PH6006 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .